Monte Carlo simulations of sub-100 nm InGaAs MOSFETs for digital applications

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 169-172

  Kalna, K ^a   Yang, L ^a,b   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Cadence   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIGITAL DEVICES; FERMI LEVEL; MONTE CARLO METHODS; QUANTUM THEORY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DRAIN DOPING; FERMI-DIRAC STATISTICS; INTERFACE ROUGHNESS; QUANTUM CONFINEMENT CORRECTIONS;

MOSFET DEVICES;

EID: 33751414042     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546612     Document Type: Conference Paper

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