A breakdown voltage multiplier for high voltage swing drivers

IEEE Journal of Solid-State Circuits

Volumn 42, Issue 2, 2007, Pages 302-312

  Mandegaran, Sam ^a,b,c,d   Hajimiri, Ali ^a,b  

^a IEEE   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c RAYTHEON COMPANY   (United States)

^d UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

Breakdown voltage (BV); Breakdown voltage doubler; Breakdown voltage multiplier; BV doubler; BV multiplier; Driver; Optical modulator driver; SiGe

Indexed keywords

BREAKDOWN VOLTAGE (BV) MULTIPLIER; BV-DOUBLER TOPOLOGY; MODULATOR DRIVER;

LIGHT MODULATION; OPTIMIZATION; TIMING CIRCUITS;

ELECTRIC BREAKDOWN;

EID: 33847724785     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2006.889390     Document Type: Article

References (27)

1. H.-M. Rein and M. Moller, "Design considerations for very-high-speed Si-bipolar ICs operating up to 50 Gb/s," IEEE J. Solid-State Circuits, vol. 31, no. 8, pp. 1076-1090, Aug. 1996.
2. M. Reinhold, C. Dorschky, E. Rose, R. Pullela, P. Mayer, F. Kunz, Y. Baeyens, T. Link, and J. P. Mattia, "A fully integrated 40-Gb/s clock and data recovery IC with 1:4 DEMUX in SiGe technology," IEEE J. Solid-State Circuits, vol. 36, no. 12, pp. 1937-1945, Dec. 2001.
3. J. Müllrich, T. F. Meister, M. Rest, W. Bogner, A. Schöpflin, and H.-M. Rein, "40 Gbit/s transimpedance amplifier in SiGe bipolar technology for the receiver in optical-fiber TDM links," Electron. Lett., vol. 34, pp. 452-453, Mar. 1998.
4. J. Hauenschild et al., "A plastic packaged 10-Gb/s BiCMOS clock and data recovery 1:4-demultiplexer with external VCO," IEEE J. Solid-State Circuits, vol. 31, no. 12, pp. 2056-2059, Dec. 1996.
5. M. Meghelli, A. V. Rylyakov, and L. Shan, "50-Gb/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial communication systems," IEEE J. Solid-State Circuits, vol. 37, no. 12, pp. 1790-1794, Dec. 2002.
6. D. J. Friedman et al., "SiGe BiCMOS integrated circuits for high-speed serial communication links," IBM J. Res. & Dev., vol. 47, pp. 277-279, Mar./May 2003.
7. H.-M. Rein, R. Schmid, P. Weger, T. Smith, T. Herzog, and R. Lachner, "A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links," IEEE J. Solid-State Circuits, vol. 29, no. 9, pp. 1014-1021, Sep. 1994.
8. Y. Yamauchi, K. Nagata, T. Makimura, O. Nakajima, H. Ito, and T. Ishibashi, "10 Gb/s monolithic optical modulator driver with high output voltage of 5 V using InGaP/GaAs HBTs," in IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symp. Tech. Dig., 1994, pp. 207-210.
9. Z. Lao, M. Yu, V. Ho, K. Guinn, M. Xu, S. Lee, V. Radisic, and K. C. Wang, "High performance 10-12.5 Gbit/s modulator driver in InP SHBT technology," Electron. Lett., vol. 39, no. 13, pp. 983-985, Jun. 26, 2003.
10. pp 10 Gbit/s E/O modulator driver IC," in IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symp. Tech. Dig., 2001, pp. 277-279.
11. J. Jeong and Y. Kwon, "10 Gb/s modulator driver IC with ultra high gain and compact size using composite lumped-distributed amplifier approach," in IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Conf. Tech. Dig., 2003, pp. 149-152.
12. R. Schmid, T. F. Meister, M. Rest, and H.-M. Rein, "40 Gbit/s EAM driver IC in SiGe bipolar technology," Electron. Lett., vol. 34, no. 11, pp. 1095-1097, May 28, 1998.
13. _, "SiGe circuit with high output amplitude operating up to 23 Gb/s," IEEE J. Solid-State Circuits, vol. 34, no. 6, pp. 886-891, Jun. 1999.
14. D.-U. Li, C. Tsai, and L.-R. Huang, "Laser/modulator driver with high modulation output operating up to 16 Gb/s using 0.35 μm SiGe BiCMOS process," in Proc. IEEE Asia-Pacific Conf. Circuits Syst., Dec., 2004, pp. 225-228.
15. S. Galal and B. Razavi, "10-Gb/s limiting amplifier and laser/modulator driver in 0.18- μm CMOS technology," IEEE J. Solid-State Circuits, vol. 38, no. 12, pp. 2138-2146, Dec. 2003.
16. A. Kanda, Y. Umeda, and T. Enoki, "10 Gbit/s series-connected voltage-balancing pulse driver with direct-coupled current switches," Electron. Lett., vol. 39, no. 12, pp. 908-909, Jun 2003.
17. D.-U. Li and C.-M. Tsai, "Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers,"Electron. Lett., vol. 41, pp. 1095-1097, Feb., 2005.
18. T. Sowlati and D. M. W. Leenaerts, "A 2.4 GHz 0.18 μmm CMOS self-biased cascode power amplifier," IEEE J. Solid-State Circuits, vol. 38, no. 8, pp. 1318-1324, Aug. 2003.
19. pp differential output swing," Electron. Lett., vol. 41, pp. 27-28, May, 2005.
20. A. J. Annema, G. Geelen, and P. de Jong, "5.5 V tolerant I/O in a 2.5 V 0.25 μm CMOS technology," IEEE J. Solid-State Circuits, vol. 36, no. 3, pp. 528-538, Mar. 2001.
21. B. Serneels, T. Piessens, M. Steyaert, and W. Dehaene, "A high-voltage output driver in a 2.5-V 0.25-μm CMOS technology," IEEE J. Solid-State Circuits, vol. 40, no. 3, pp. 576-583, Mar. 2005.
22. S. Mandegaran and A. Hajimiri, "A breakdown voltage doubler for high voltage swing drivers," in Proc. IEEE Custom Integrated Circuits Conf. (CICC), 2004, pp. 103-106.
23. R. S. Muller and T. L Kamins, Device Electronics For Integrated Circuits, 3rd ed. New York: Wiley, 2003.
24. G. W. Neudeck, The Bipolar Junction Transistor, 2nd ed. Reading, MA: Addison-Wesley, 1989.
25. M. Alioto and G. Palumbo, "CML and ECL: Optimized design and comparison," IEEE Trans. Circuits Syst. I: Fundam. Theory Appl., vol. 46, no. 11, pp. 1330-1341, Nov. 1999.
26. K. M. Sharaf and M. I. Elmasry, "An accurate analytical propagation delay model for high-speed CML bipolar circuits," IEEE J. Solid-State Circuits, vol. 29, no. 1, pp. 31-45, Jan. 1994.
27. M. I. Elmasry, Digital Bipolar Circuits. New York: Wiley, 1983.