A 2.4-GHz 0.18-μm CMOS self-biased cascode power amplifier

IEEE Journal of Solid-State Circuits

Volumn 38, Issue 8, 2003, Pages 1318-1324

  Sowlati, Tirdad ^a,b   Leenaerts, Domine M W ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b SKYWORKS SOLUTIONS INC   (United States)

Author keywords

Bluetooth; CMOS; Power amplifier

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; TRANSISTORS;

POWER-ADDED EFFICIENCY (PAE);

POWER AMPLIFIERS;

EID: 0043198156     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2003.814417     Document Type: Article

References (14)

1. F. Op't Eynde, "A fully integrated single-chip SOC for Bluetooth," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2001, pp. 196-197.
2. 2 silicon area," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2002, pp. 91-92.
3. H. Darabi et al., "A 2.4-GHz CMOS transceiver for Bluetooth," IEEE J. Solid-State Circuits, vol. 36, pp. 2016-2024, Dec. 2001.
4. P. van Zeijl et al., "A Bluetooth radio in 0.18 CMOS," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2002, pp. 86-87.
5. C. Fallesen and P. Asbeck, "A 1-W 0.35-μm CMOS power amplifier for GSM-1800 with 45% PAE," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2001, pp. 158-159.
6. V. Vathulya, T. Sowlati, and D. M. W. Leenaerts, "Class-1 Bluetooth power amplifier with 24-dBm output power and 48% PAE at 2.4 GHz in 0.25-μm CMOS," in Proc. Eur. Solid-State Circuits Conf., Sept. 2001, pp. 84-87.
7. C. Yoo and Q. Huang, "A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-μm CMOS," IEEE J. Solid-State Circuits, vol. 36, pp. 823-830, May 2001.
8. T. Kuo and B. Lusignan, "A 1.5-W class-F RF power amplifier in 0.25-μm CMOS technology," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2001, pp. 154-155.
9. A. Shirvani, D. Su, and B. Wooley, "A CMOS RF power amplifier with parallel amplification for efficient power control," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2001, pp. 156-157.
10. K. L. R. Mertens and M. S. J. Steyaert, "A 700-MHz 1-W fully differential CMOS class-E power amplifier," IEEE J. Solid-State Circuits, vol. 37, pp. 137-141, Feb. 2002.
11. T. Sowlati and D. M. W. Leenaerts, "A 2.4 GHz in 0.18-μm CMOS self-biased cascode power amplifier with 23-dBm output power," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2002, pp. 294-295.
12. T. Sowlati, V. Vathulya, and D. M. W. Leenaerts, "High density capacitance structures in submicron CMOS for RF applications," in Proc. Int. Symp. Low Power Electronics and Design, 2001, pp. 243-246.
13. D. M. W. Leenaerts, C. Vaucher, and J. van der Tang, Circuit Design for RF Transceivers. Dordrecht, The Netherlands: Kluwer, 2001.
14. T. Sowlati and S. Lou, "Bias boosting technique for a 1.9-GHz class-AB RF amplifier," in Proc. Int. Symp. Low Power Electronics and Design, July 2000, pp. 284-288.