SiGe driver circuit with high output amplitude operating up to 23 Gb/s

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 6, 1999, Pages 886-891

  Schmid, R ^a,b   Meister, T F ^c   Rest, M ^c   Rein, H M ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b MICRAM MICROELECTRONIC GMBH   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MODULATION; BIPOLAR INTEGRATED CIRCUITS; COMPUTER SIMULATION; INTEGRATED CIRCUIT MANUFACTURE; MODULATORS; SEMICONDUCTING SILICON COMPOUNDS; TIME DIVISION MULTIPLEXING;

DRIVER CIRCUITS; HIGH SPEED INTEGRATED CIRCUITS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0032651135     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.766824     Document Type: Article

References (11)

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