Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Journal of Applied Physics

Volumn 99, Issue 3, 2006, Pages

  Fu, Y ^a   Yun, F ^a   Moon, Y T ^a   Ozgur U ^a   Xie, J Q ^a   Ni, X F ^a   Biyikli, N ^a   Morkoc H ^a   Zhou, Lin ^b   Smith, David J ^b   Inoki, C K ^c   Kuan, T S ^c  

^a Virginia Commonwealth University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PARAMETERS; NANONETWORKS;

ANNEALING; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 33645500792     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2170422     Document Type: Article

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