Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 233-238

  Darakchieva, V ^a   Paskova, T ^b   Schubert, M ^c   Paskov, P P ^a   Arwin, H ^a   Monemar, B ^a   Hommel, D ^b   Heuken, M ^d   Off, J ^e   Haskell, B A ^f   Fini, P T ^f   Speck, J S ^f   Nakamura, S ^f  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF BREMEN   (Germany)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^d AIXTRON AG   (Germany)

^e UNIVERSITY OF STUTTGART   (Germany)

^f Santa Barbara   (United States)

Author keywords

A1. High resolution X ray diffraction; A1. Infrared spectroscopic ellipsometry; A1. Phonons; B1. GaN

Indexed keywords

ANISOTROPY; DEFORMATION; GALLIUM NITRIDE; STRAIN; THIN FILMS; X RAY DIFFRACTION;

GENERALIZED INFRARED SPECTROSCOPIC ELLIPSOMETRY (GIRSE); HIGH-RESOLUTION X-RAY DIFFRACTION; INFRARED SPECTROSCOPIC ELLIPSOMETRY; STRAIN ANISOTROPY;

PHONONS;

EID: 33847263409     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.023     Document Type: Article

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