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Volumn 300, Issue 1, 2007, Pages 233-238

Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

Author keywords

A1. High resolution X ray diffraction; A1. Infrared spectroscopic ellipsometry; A1. Phonons; B1. GaN

Indexed keywords

ANISOTROPY; DEFORMATION; GALLIUM NITRIDE; STRAIN; THIN FILMS; X RAY DIFFRACTION;

EID: 33847263409     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.023     Document Type: Article
Times cited : (10)

References (20)
  • 13
    • 33847321751 scopus 로고    scopus 로고
    • J. Off, Ph.D. Thesis, Shaker Verlag, 2001 ISBN 3-8265-9373-1.
  • 19
    • 33847314826 scopus 로고    scopus 로고
    • M. Schubert, Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons and Polaritons, vol. 209, Springer, Heidelberg, 2004, ISBN 3-540-23249-4.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.