Anisotropy of the in-plane strain in GaN grown on A-plane sapphire

Physica Status Solidi (B) Basic Research

Volumn 234, Issue 3, 2002, Pages 892-896

  Paskov, P P ^a   Darakchieva, V ^a   Paskova, T ^a   Holtz, P O ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036925001     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200212)234:3<892::AID-PSSB892>3.0.CO;2-T     Document Type: Conference Paper

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