Output properties of C60 field-effect transistors with different source/drain electrodes

Applied Physics Letters

Volumn 90, Issue 8, 2007, Pages

  Takahashi, Nobuya ^a   Maeda, Akira ^a   Uno, Koichi ^a   Shikoh, Eiji ^a   Yamamoto, Yoshiyuki ^a   Hori, Hidenobu ^a   Kubozono, Yoshihiro ^b   Fujiwara, Akihiko ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; GOLD; INDIUM COMPOUNDS; SCHOTTKY BARRIER DIODES;

FIELD EFFECT MOBILITY; INDIUM TIN OXIDE (ITO); ORGANIC ELECTRONICS; SOURCE/DRAIN ELECTRODES;

FIELD EFFECT TRANSISTORS;

EID: 33847217207     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2709523     Document Type: Article

References (27)

1. C. D. Dimitrakopoulos and D. J. Mascaro, IBM J. Res. Dev. 45, 11 (2001).
2. V. Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, and M. E. Gershenson, Appl. Phys. Lett. 83, 3504 (2003).
3. P. R. L. Malenfant, C. D. Dimitrakopoulous, J. D. Gelorme, L. L. Kosbar, and T. O. Graham, Appl. Phys. Lett. 80, 2517 (2002).
4. S. Kobayashi, T. Takenobu, S. Mori, A. Fujiwara, and Y. Iwasa, Appl. Phys. Lett. 82, 4581 (2003).
5. K. Itaka, M. Yamashiro, J. Yamaguchi, M. Haemori, S. Yaginuma, Y. Matsumoto, M. Kondo, and H. Koinuma, Adv. Mater. (Weinheim, Ger.) 18, 1713 (2006).
6. I. Yagi, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 84, 813 (2004).
7. B. H. Hamadani and D. Natelson, J. Appl. Phys. 95, 1227 (2004).
8. P. V. Pesavento, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, J. Appl. Phys. 96, 7312 (2004).
9. T. Ohta, T. Nagano, K. Ochi, Y. Kubozono, E. Shikoh, and A. Fujiwara, Appl. Phys. Lett. 89, 053508 (2006).
10. K. Ochi, T. Nagano, T. Ohta, R. Nouchi, Y. Kubozono, Y. Matsuoka, E. Shikoh, and A. Fujiwara, Appl. Phys. Lett. 89, 083511 (2006).
11. Y. Matsuoka, K. Uno, N. Takahashi, A. Maeda, N. Inami, E. Shikoh, Y. Yamamoto, H. Hori, and A. Fujiwara, Appl. Phys. Lett. 89, 173510 (2006).
12. T. Takahashi, T. Takenobu, J. Tkeya, and Y. Iwasa, Appl. Phys. Lett. 88, 033505 (2006).
13. Y. Takahashi, T. Hasegawa, Y. Abe, Y. Tokura, and G. Saito, Appl. Phys. Lett. 88, 073504 (2006).
14. T. Maeda, H. Kato, and H. Kawakami, Appl. Phys. Lett. 89, 123508 (2006).
15. For an overview, see H. Ishii, N. Hayashi, E. Ito, Y. Washizu, K. Sugi, Y. Kimura, M. Niwano, O. Ouchi, and K. Seki, in Physics of Organic Semiconductors, edited by, W. Brütting, (Wiley-VCH, Berlin, 2005), Chap., 69-94.
16. B. W. Hoogenboom, R. Hesper, L. H. Tjeng, and G. A. Sawatzky, Phys. Rev. B 57, 11939 (1998).
17. R. Nouchi and I. Kanno, J. Appl. Phys. 97, 103716 (2005).
18. L.-L. Wang and H.-P. Cheng, Phys. Rev. B 69, 045404 (2004).
19. L.-L. Wang and H.-P. Cheng, Phys. Rev. B 69, 165417 (2004).
20. S. C. Veenstra, A. Heeres, G. Hadziioannou, G. A. Sawatzky, and H. T. Jonkman, Appl. Phys. A: Mater. Sci. Process. 75, 661 (2002).
21. K. Ihm, B. Kim, T.-H. Kang, K.-J. Kim, M. H. Joo, T. H. Kim, S. S. Yoon, and S. Chung, Appl. Phys. Lett. 89, 033504 (2006).
22. K. Shibata, Y. Kubozono, T. Kanbara, T. Hosokawa, A. Fujiwara, Y. Ito, and H. Shinohara, Appl. Phys. Lett. 84, 2572 (2004).
23. H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977).
24. I. D. Parker, J. Appl. Phys. 75, 1656 (1994).
25. Y. Park, V. Choong, Y. Gao, B. R. Hsieh, and C. W. Tang, Appl. Phys. Lett. 68, 2699 (1996).
26. N. Sato, Y. Saito, and H. Shinohara, Chem. Phys. 162, 433 (1992).
27. N. Hayashi, H. Ishii, Y. Ouchi, and K. Seki, J. Appl. Phys. 92, 3784 (2002).