Intrinsic transport and contact resistance effect in C60 field-effect transistors

Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

  Matsuoka, Yukitaka ^b,c   Uno, Koichi ^b   Takahashi, Nobuya ^b   Maeda, Akira ^b   Inami, Nobuhito ^b   Shikoh, Eiji ^b   Yamamoto, Yoshiyuki ^b   Hori, Hidenobu ^b   Fujiwara, Akihiko ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; LINEAR SYSTEMS; SCHOTTKY BARRIER DIODES; TRANSPORT PROPERTIES;

C60 FIELD-EFFECT TRANSISTORS (FETS); CHANNEL RESISTANCES; CONTACT RESISTANCE; GATE VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 33750491204     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2372596     Document Type: Article

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