Improved device performance and reliability in high κ HfTaTiO gate dielectric with TaN gate electrode

IEEE Electron Device Letters

Volumn 26, Issue 11, 2005, Pages 790-792

  Lu, Nan ^a   Li, H J ^b   Gardner, M ^b   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

Charge trapping; Electron mobility; Equivalent oxide thickness (EOT); High ; MOSFET; Time zero dielectric breakdown (TZDB)

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRODES; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTOR GROWTH; SILICA; TANTALUM COMPOUNDS; ULTRATHIN FILMS;

BULK DIELECTRIC; EQUIVALENT OXIDE THICKNESS (EOT); STRESS-INDUCED LEAKAGE CURRENT (SILC); TIME ZERO DIELECTRIC BREAKDOWN (TZDB);

GATES (TRANSISTOR);

EID: 27744558364     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.857698     Document Type: Article

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