Langmuir analysis on hydrogen gas response of palladium-gate FET

Sensors and Actuators, B: Chemical

Volumn 33, Issue 1-3, 1996, Pages 96-99

  Morita, Yasuhiro ^a   Nakamura, Ken ichi ^a   Kim, Chol ^b  

^a TOKYO GAS CO LTD   (Japan)

^b CAS Corporation   (South Korea)

Author keywords

Hydrogen gas; Langmuir analysis; Palladium gate field effect transistor

Indexed keywords

EID: 0042138206     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-4005(96)01956-9     Document Type: Article

References (6)

1. I. Lundström, M.S. Shivaraman, C.M. Svensson and L. Lundkvist, Hydrogen sensitive MOS field-effect transistor, Appl. Phys. Lett., 26 (1975) 55-57.
2. Y. Monta and C. Kim, The effect of thermal anneal for MOSFET gas sensors, Proc. Jpn. Assoc. Chem. Sensors, 10 (1994) 97.
3. I. Lundström, M. Armgarth, A. Spetz and F. Winquist, Gas sensors based on catalytic metal-gate field-effect devices, Sensors and Actuators, 10 (1986) 399-421.
4. P.F. Ruths, S. Ashok, S.J. Fonash and J.M. Ruths, A study of Pd/Si MIS Schottky barrier diode hydrogen detector, IEEE Trans. Electron Devices, ED-28 (1981) 1003-1009.
5. T.L. Poteat, B. Lalevic, B. Kuliyev, M. Yousuf and M. Chen, MOS and Schottky diode gas sensors using transition metal electrodes, J. Electron Mater., 12 (1983) 181-214.
6. M.A. Butler, Mechanism of hydrogen sensing in Pd-Si metal-insulator semiconductor diodes, J. Appl. Phys., 58 (1985) 2044-2050.