메뉴 건너뛰기




Volumn 19, Issue 14, 2003, Pages 5923-5935

Electroless deposition of NiB on 15 inch glass substrates for the fabrication of transistor gates for liquid crystal displays

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLESS PLATING; GATES (TRANSISTOR); GLASS; NICKEL COMPOUNDS; PHOTORESISTS; THIN FILM TRANSISTORS;

EID: 0037703303     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la0341714     Document Type: Article
Times cited : (37)

References (82)
  • 24
    • 0038337878 scopus 로고    scopus 로고
    • note
    • Gates thicker than 250 nm can be difficult to cover by the subsequent layers in a well conformal manner, and many published designs for TFTs comprise gates 250 nm thick. See refs 12 and 22, for example.
  • 25
    • 0037999929 scopus 로고    scopus 로고
    • note
    • Note that design rules can relax the conductivity requirements for the gate layer by more than 50%.
  • 31
    • 0015048814 scopus 로고
    • Mallory, G. O. Plating 1971, April, 319-327.
    • (1971) Plating , vol.APRIL , pp. 319-327
    • Mallory, G.O.1
  • 42
    • 0037999928 scopus 로고    scopus 로고
    • note
    • Unexpected concerns, which arose during this work, were the possibility of contaminating the line of fabrication of prototype displays by losing NiB particles in plasma deposition and photoexposure tools, for example. The high quality of the deposited NiB layers precluded encountering these problems.
  • 48
    • 84953864603 scopus 로고
    • These findings indicate that the critical density of Pd/Sn bound to the EDA-Si layers was reached in all cases. See also: Okinaka, Y.; Osaka, T. Adv. Electrochem. Sci. Eng. 1994, 3, 55-116.
    • (1994) Adv. Electrochem. Sci. Eng. , vol.3 , pp. 55-116
    • Okinaka, Y.1    Osaka, T.2
  • 49
    • 0037662154 scopus 로고    scopus 로고
    • note
    • 2, and stored for at least 10 min at room temperature before proceeding with measurements or deposition of Pd/Sn.
  • 50
    • 0038676354 scopus 로고    scopus 로고
    • note
    • These experiments were done using a 1% solution of EDA-Si in water (at room temperature, without stirring) and an adsorption time of 10 min. We did not notice variations in the thickness of the deposited EDA-Si film on the wafer even for longer adsorption times or when solutions of EDA-Si in water were up to a few weeks old.
  • 70
    • 0038337876 scopus 로고    scopus 로고
    • note
    • 4 did compromise the strike of the NiB in the bath, which might occur due to dissolving the Sn shell of some particles entirely and displacing them from the glass surface.
  • 77
    • 0037999927 scopus 로고    scopus 로고
    • note
    • 4 already 50% diluted with water and cooled to room temperature in small portions, and protection should be worn during this operation.
  • 78
    • 0011722272 scopus 로고
    • Stripping of electrodeposits
    • Lowenheim, F. A., Ed.; John Wiley & Sons: New York
    • Saubestre, E. B. Stripping of Electrodeposits. In Modern Electroplating, 3rd ed.; Lowenheim, F. A., Ed.; John Wiley & Sons: New York, 1974; pp 748-770.
    • (1974) Modern Electroplating, 3rd Ed. , pp. 748-770
    • Saubestre, E.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.