-
1
-
-
0028758513
-
Strain dependence of the performance enhancement in strained-Si n-MOSFETs
-
Dec
-
J. Wieser, J. L. Hoyt, S. Takagi, and J. F. Gibbons, "Strain dependence of the performance enhancement in strained-Si n-MOSFETs," International Electron Devices Meeting, 1994.TechnicalDigest., vol. 11-14, pp. 373-376, Dec. 1994.
-
(1994)
International Electron Devices Meeting, 1994.TechnicalDigest
, vol.11-14
, pp. 373-376
-
-
Wieser, J.1
Hoyt, J.L.2
Takagi, S.3
Gibbons, J.F.4
-
2
-
-
18644382452
-
Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors
-
C. W. Leitz, M. T. Currie, M. L. Lee, Z. Y. Cheng, D. A. Antoniadis, and E. A. Fitzgerald, "Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 92, pp. 3745-3751, 2002.
-
(2002)
J. Appl. Phys
, vol.92
, pp. 3745-3751
-
-
Leitz, C.W.1
Currie, M.T.2
Lee, M.L.3
Cheng, Z.Y.4
Antoniadis, D.A.5
Fitzgerald, E.A.6
-
3
-
-
0036045608
-
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
-
K. Rim et al., "Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs", 2002 Symp. On VLSI Tech. pp. 98-99, 2002.
-
(2002)
2002 Symp. On VLSI Tech
, pp. 98-99
-
-
Rim, K.1
-
4
-
-
0036928734
-
Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
-
Technical Digest, pp
-
K. Rim, S. Narasimha, M. Longstreet, A. Mocuta, and J. Cai, "Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs", International Electron Devices Meeting, 2002.Technical Digest., pp. 43-46, 2002.
-
(2002)
International Electron Devices Meeting
, pp. 43-46
-
-
Rim, K.1
Narasimha, S.2
Longstreet, M.3
Mocuta, A.4
Cai, J.5
-
5
-
-
0036927652
-
Strained silicon MOSFET technology
-
Dec
-
J. L. Hoyt, H. M. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E. A. Fitzgerald, and D. A. Antoniadis, "Strained silicon MOSFET technology," International Electron Devices Meeting, 2002. IEDM'02. Digest., vol. 8-11, pp. 23-26, Dec. 2002
-
(2002)
International Electron Devices Meeting, 2002. IEDM'02. Digest
, vol.8-11
, pp. 23-26
-
-
Hoyt, J.L.1
Nayfeh, H.M.2
Eguchi, S.3
Aberg, I.4
Xia, G.5
Drake, T.6
Fitzgerald, E.A.7
Antoniadis, D.A.8
-
7
-
-
0032098013
-
SiGe heterostructures for FET applications
-
T. E. Whall, and E. H. C. Parker, "SiGe heterostructures for FET applications", J. Phys. D: Appl. Phys., vol. 31, pp. 1397-1416, 1998.
-
(1998)
J. Phys. D: Appl. Phys
, vol.31
, pp. 1397-1416
-
-
Whall, T.E.1
Parker, E.H.C.2
-
8
-
-
36449008424
-
Extremely high electron mobility in Si/SiGe modulation-doped heterostructures
-
K. Ismail, M. Arafa, K. L. Saenger, J. O. Chu, and B. S. Meyerson, "Extremely high electron mobility in Si/SiGe modulation-doped heterostructures", Appl. Phys. Lett., vol. 66, pp. 1077-1079, 1995.
-
(1995)
Appl. Phys. Lett
, vol.66
, pp. 1077-1079
-
-
Ismail, K.1
Arafa, M.2
Saenger, K.L.3
Chu, J.O.4
Meyerson, B.S.5
-
9
-
-
0034227743
-
Fabrication and analysis of deep submicron strained-Si n-MOSFETs
-
K. Rim, J. L. Hoyt, and J. F. Gibbons, "Fabrication and analysis of deep submicron strained-Si n-MOSFETs", IEEE Trans. Electron Devices, vol. 47, pp. 1406-1415, 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 1406-1415
-
-
Rim, K.1
Hoyt, J.L.2
Gibbons, J.F.3
-
10
-
-
0033693569
-
SiGe technology: Heteroepitaxy and high-speed microelectronics
-
P. M. Mooney, and J. O. Chu, "SiGe technology: Heteroepitaxy and high-speed microelectronics", Annu. Rev. Mater. Sci., vol. 30, pp. 335-362, 2000.
-
(2000)
Annu. Rev. Mater. Sci
, vol.30
, pp. 335-362
-
-
Mooney, P.M.1
Chu, J.O.2
-
11
-
-
0000655054
-
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
-
K. Ismail, F. K. LeGoues, K. L. Saenger, M. Arafa, J. O. Chu, P. M. Mooney, and B. S. Meyerson, "Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures", Phys. Rev. Lett., vol. 73, pp. 3447-3450, 1994.
-
(1994)
Phys. Rev. Lett
, vol.73
, pp. 3447-3450
-
-
Ismail, K.1
LeGoues, F.K.2
Saenger, K.L.3
Arafa, M.4
Chu, J.O.5
Mooney, P.M.6
Meyerson, B.S.7
-
12
-
-
0034229176
-
Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides
-
K. D. Hobart, F. J. Kub, M. Fatemi, M. E. Twigg, P. E. Thompson, T. S. Kuan, and C. K. Inoki, "Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides", J. Electron. Mater., vol. 29, pp. 897-900, 2000.
-
(2000)
J. Electron. Mater
, vol.29
, pp. 897-900
-
-
Hobart, K.D.1
Kub, F.J.2
Fatemi, M.3
Twigg, M.E.4
Thompson, P.E.5
Kuan, T.S.6
Inoki, C.K.7
-
13
-
-
0001662055
-
Compliant substrate technology: Status and prospects
-
A. S. Brown, "Compliant substrate technology: Status and prospects", J. Vac. Sci. Technol. B, vol. 16, pp. 2308-2312, 1998.
-
(1998)
J. Vac. Sci. Technol. B
, vol.16
, pp. 2308-2312
-
-
Brown, A.S.1
-
14
-
-
1542784446
-
Elastic strain relaxation in free-standing SiGe/Si structures
-
P. M. Monney, G. M. Cohen, J. O. Chu, and C. E. Murray, "Elastic strain relaxation in free-standing SiGe/Si structures", Appl. Phys. Lett., vol. 84, pp. 1093-1095, 2004.
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 1093-1095
-
-
Monney, P.M.1
Cohen, G.M.2
Chu, J.O.3
Murray, C.E.4
-
15
-
-
23744447252
-
Dislocation-free strained silicon-on-silicon by in-place bonding
-
G. M. Cohen, P. M. Mooney, V. K. Paruchuri, and H. J. Hovel, "Dislocation-free strained silicon-on-silicon by in-place bonding", Appl. Phys. Lett., vol. 86, pp. 251902-251904, 2005.
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 251902-251904
-
-
Cohen, G.M.1
Mooney, P.M.2
Paruchuri, V.K.3
Hovel, H.J.4
-
16
-
-
33847083962
-
Elastically relaxed free-standing strained-Si nano-membranes, submitted to Nature
-
M. M. Roberts, L. J. Klein, D. E. Savage, K. A. Slinker, M. Friesen, G. Celler, M. A. Eriksson, and M. G. Lagally, "Elastically relaxed free-standing strained-Si nano-membranes", submitted to Nature Materials.
-
Materials
-
-
Roberts, M.M.1
Klein, L.J.2
Savage, D.E.3
Slinker, K.A.4
Friesen, M.5
Celler, G.6
Eriksson, M.A.7
Lagally, M.G.8
-
17
-
-
0343973898
-
x/Si heterostructures
-
x/Si heterostructures", J. Appl. Phys. vol. 70, pp. 2136-2151, 1991.
-
(1991)
J. Appl. Phys
, vol.70
, pp. 2136-2151
-
-
Houghton, D.C.1
-
18
-
-
33847014814
-
High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers
-
submitted to
-
H.-C. Yuan, M. M. Roberts, D. E. Savage, Z. Ma, and M. G. Lagally, "High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers", submitted to J. Appl. Phys.
-
J. Appl. Phys
-
-
Yuan, H.-C.1
Roberts, M.M.2
Savage, D.E.3
Ma, Z.4
Lagally, M.G.5
-
19
-
-
0142159473
-
-
Cambridge University Press, Cambridge
-
L. B. Freund, and S. Suresh, Thin Film Materials, Cambridge University Press, Cambridge, 2003, pp. 165.
-
(2003)
Thin Film Materials
, pp. 165
-
-
Freund, L.B.1
Suresh, S.2
-
20
-
-
33847018451
-
-
to be published
-
M. M. Roberts et al., to be published.
-
-
-
Roberts, M.M.1
-
21
-
-
0000731331
-
1-zAs hetero structure with double subband occupancy
-
1-zAs hetero structure with double subband occupancy", Phys. Rev. B, vol. 37, pp. 2756-2758, 1988.
-
(1988)
Phys. Rev. B
, vol.37
, pp. 2756-2758
-
-
van Houten, H.1
Williamson, J.G.2
Broekarrt, M.E.3
Foxon, C.T.4
Harris, J.J.5
-
22
-
-
37149037543
-
Quantum transport in semiconductor nanostructures
-
C. W. J. Beenakker, and H. van Houten, "Quantum transport in semiconductor nanostructures", Solid State Phys., vol. 44, pp. 1, 1991.
-
(1991)
Solid State Phys
, vol.44
, pp. 1
-
-
Beenakker, C.W.J.1
van Houten, H.2
-
23
-
-
19944431063
-
-
A. Nathan, D. Striakhilev, P. Servati, K. Sakariya, A. Sazonov, S. Alexander, S. Tao, C.-H. Lee, A. Kumar, S. Sambandan, S. Jafarabadiashtiani, Y. Vygranenko, and I. W. Chan, Mat. Res. Soc. Symp. Proc., vol. 814, pp. 61-72, 2004.
-
(2004)
Mat. Res. Soc. Symp. Proc
, vol.814
, pp. 61-72
-
-
Nathan, A.1
Striakhilev, D.2
Servati, P.3
Sakariya, K.4
Sazonov, A.5
Alexander, S.6
Tao, S.7
Lee, C.-H.8
Kumar, A.9
Sambandan, S.10
Jafarabadiashtiani, S.11
Vygranenko, Y.12
Chan, I.W.13
-
24
-
-
9744248669
-
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
-
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors", Nature, vol. 432, pp. 488-492, 2004.
-
(2004)
Nature
, vol.432
, pp. 488-492
-
-
Nomura, K.1
Ohta, H.2
Takagi, A.3
Kamiya, T.4
Hirano, M.5
Hosono, H.6
-
25
-
-
0029246215
-
-
A. Kohno, T. Sameshima, N. Sano, M. Sekiya, and M. Hara, IEEE Trans. Electron Devices, vol. 42, pp. 251-257, 1995.
-
(1995)
IEEE Trans. Electron Devices
, vol.42
, pp. 251-257
-
-
Kohno, A.1
Sameshima, T.2
Sano, N.3
Sekiya, M.4
Hara, M.5
-
26
-
-
0032284102
-
Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation
-
Technical Digest, pp
-
H.-S. P. Wong, D. J. Frank, and P. M. Solomon, "Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation", International Electron Devices Meeting, 1994.Technical Digest., pp. 407-410, 1994.
-
(1994)
International Electron Devices Meeting
, pp. 407-410
-
-
Wong, H.-S.P.1
Frank, D.J.2
Solomon, P.M.3
-
27
-
-
18344401509
-
-
R. Chau, J. Kavalieros, B. Doyle, A. Murthy, N. Paulsen, and D. Lionberger, A 50 nm depleted-substrate CMOS transistor (DST), International Electron Devices Meeting, 2001.Technical Digest., pp. 29.1.1-29.1.4, 2001.
-
R. Chau, J. Kavalieros, B. Doyle, A. Murthy, N. Paulsen, and D. Lionberger, "A 50 nm depleted-substrate CMOS transistor (DST)", International Electron Devices Meeting, 2001.Technical Digest., pp. 29.1.1-29.1.4, 2001.
-
-
-
-
28
-
-
33847030357
-
Electronic transport in nanometer-scale silicon-on-insulator
-
submitted to
-
P. Zhang, E. Tevaarwerk, B.-N. Park, D. E. Savage, G. Celler, I. Knezevic, P. G. Evans, M. A. Eriksson, and M. G. Lagally, "Electronic transport in nanometer-scale silicon-on-insulator", submitted to Nature.
-
Nature
-
-
Zhang, P.1
Tevaarwerk, E.2
Park, B.-N.3
Savage, D.E.4
Celler, G.5
Knezevic, I.6
Evans, P.G.7
Eriksson, M.A.8
Lagally, M.G.9
-
29
-
-
0001132890
-
Electronic structure of Si(100)c(4×2) calculated within the GW approximation
-
J. E. Northrup, "Electronic structure of Si(100)c(4×2) calculated within the GW approximation", Phys. Rev. B, vol. 47, pp. 10032-10035, 1993.
-
(1993)
Phys. Rev. B
, vol.47
, pp. 10032-10035
-
-
Northrup, J.E.1
|