Atomic transport and integrity of Al2O3(2.0 nm)/HfO2(2.5 nm) gate stacks on Si

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Miotti, L ^a   Pezzi, R P ^a   Copel, M ^b   Krug, C ^c   Baumvol, I J R ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DESORPTION; DISSOCIATION; ELECTRIC PROPERTIES; ELECTRON SCATTERING; HAFNIUM; RAPID THERMAL ANNEALING; SILICON;

ATOMIC LAYER DEPOSITION; ATOMIC TRANSPORT; GATE STACKS; ION SCATTERING;

ALUMINA;

EID: 33846995967     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2437708     Document Type: Article

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