Channel material innovations for continuing the historical MOSFET performance increase with scaling

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 3-15

  Antoniadis, D A ^a   Khakifirooz, A ^a   Aberg I ^a   Hoyt, J L ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHANNEL CAPACITY; MATHEMATICAL MODELS; STRAIN MEASUREMENT; TRANSISTORS;

CARRIER VELOCITY; PROCESS INDUCED STRAINS; STRAIN ENGINEERING; TRANSISTOR DELAYS;

MOSFET DEVICES;

EID: 33846986375     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355789     Document Type: Conference Paper

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