The Voltage-Doping Transformation: A New Approach to the Modeling of MOSFET Short-Channel Effects

IEEE Electron Device Letters

Volumn 9, Issue 3, 1988, Pages 109-112

  Skotnicki, Tomasz ^a   Merckel, Gerard ^a   Pedron, Thierry ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - ELECTRIC PROPERTIES;

POTENTIAL BARRIER HEIGHT; SHORT-CHANNEL EFFECTS; VOLTAGE-DOPING TRANSFORMATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023984435     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.2058     Document Type: Article

References (9)

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2. K. N. Ratnakumar and J. D. Meindl, “Short-channel MOST threshold voltage model”, IEEE J. Solid-Slate Circuits, vol. SC-17, pp. 937-947, Oct. 1982.
3. T. Skotnicki and W. Marciniak, “A new approach to threshold voltage modelling of short-channel MOSFET's”, Solid-State Electron., vol. 29, no. 11, pp. 1115-1127, 1986.
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7. T. Skotnicki, Ph.D. dissertation, Institute of Electron Technology CEMI, Warsaw, 1985.
8. S. Selberherr, A. Sch[formula omitted]tz, and H. W. P[formula omitted]tzl, “MINIMOS-A two-dimensional MOS transistor analyzer”, IEEE Trans. Electron Devices, vol. ED-27, pp. 1540-1550, Aug. 1980.
9. F. M. Klaassen and W. C. J. de Groot, “Modelling of scaled-down MOS transistors”, Solid-State Electron., vol. 23, pp. 237-242, no. 3, 1980.