Residual strain and surface roughness of Si1-xGex alloy layers grown by molecular beam epitaxy on Si(001) substrate

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 161-166

  Tatsuyama, C ^a   Asano, T ^a   Nakao, T ^a   Matada, H ^a   Tambo, T ^a   Ueba, H ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

RESIDUAL STRAIN; SEMICONDUCTOR BUFFERS;

SEMICONDUCTING FILMS;

EID: 0034228195     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00798-7     Document Type: Article

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