Strain relaxation of graded SiGe buffers grown at very high rates

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 20-23

  Rosenblad, C ^a   Stangl, J ^b   Muller E ^c   Bauer, G ^b   Von Kanel H ^a  

^a ETH ZURICH   (Switzerland)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ETCHING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

SILICON GERMANIDE; THREADING DISLOCATIONS; X RAY RECIPROCAL SPACE MAPPING;

SEMICONDUCTING FILMS;

EID: 0033907224     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00343-8     Document Type: Article

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