Damage in thin SiO2-Si structures induced by RIE-mode nitrogen and oxygen plasma

Solid-State Electronics

Volumn 42, Issue 5, 1998, Pages 777-784

  Paskaleva, A ^a   Atanassova, E ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON EMISSION; LEAKAGE CURRENTS; NITROGEN; OXYGEN; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SILICA;

GATE OXIDE;

HETEROJUNCTIONS;

EID: 0032065043     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00091-4     Document Type: Article

References (29)

1. Watanabe, T. and Yoshida, Y., Solid State Technol., 1984, 28, 263.
2. Atanassova, E., Kassabov, J. and Goranova, E., Microel. J., 1990, 21, 5.
3. Gabriel, C. T., J. Vac. Sci. Technol. B, 1991, 9, 370.
4. Kassabov, J. and Atanassova, E., in Advances in Low-Temperature Plasma Chemistry, Technology, Applications, Vol. 4, ed. H. Boenig. Techn. Publ. Comp. Inc., Lancaster Pennsylvania, U.S.A., 1992, p. 123.
5. Felch, S. B., Salimian, S. and Hodul, D. T., J. Vac. Sci. Technol. B, 1992, 10, 1320.
6. Atanassova, E., Thin Solid Films, 1995, 264, 72.
7. Hoff, A. M., Esry, T. C. and Nauka, K., Solid State Technol., 1996, July, 139.
8. Atanassova, E. and Paskaleva, A., Solid State Electr., 1996, 39, 1033.
9. Ephrath, L. M. and DiMaria, D. J., Solid State Technol., 1981, April, 182.
10. Verdonck, P., Hasenack, C. M. and Mansano, R. D., J. Vac. Sci. Technol. B, 1996, 14, 538.
11. Fonash, S., Viswanathan, C. R. and Chan, Y. D., Solid State Technol., 1994, 37, 99.
12. Kassabov, J., Atanassova, E., Vassileva, J. and Dimitrov, D., Solid State. Electr., 1992, 35, 1621.
13. Atanassova, E. and Paskaleva, A., Appl. Surf. Sci., accepted.
14. Sah, C. T., Solid State Electr., 1990, 33, 147.
15. Samson, J. A. R., ed., Techniques of Vacuum Ultraviolet Spectroscopy. J. Wiley and Sons, New York, 1967, Chap. 6.
16. Winokur, P. S. and Boesch, H. E.Jr., IEEE Trans. Nucl. Sci., 1980, 27, 1647.
17. McLean, F. B., IEEE Trans. Nucl. Sci., 1980, 27, 1651.
18. Feigl, F. J., Fowler, W. B. and Yip, K. L., Solid State Commun., 1974, 14, 225.
19. Revesz, A., IEEE Trans. Nucl. Sci., 1971, 18, 113.
20. 2 and its Interfaces, ed. S. Pantelides. Pergamon Press, New York, 1978, p. 222.
21. Fleetwood, D. M., Shaneyfelt, M. R., Warren, W. L., Schwank, J. R., Meisenheimer, T. L. and Winokur, P. S., Microelectr. Reliab., 1995, 35, 403.
22. Lai, S. K. and Young, D. R., J. Appl. Phys., 1981, 52, 6231.
23. Devine, R. A. B. and Fiori, C., J. Appl. Phys., 1985, 57, 5162.
24. Winokur, P. S., Boesch, H. E.Jr., McGarrity, J. M. and McLean, F. B., J. Appl. Phys., 1979, 50, 3492.
25. Poindexter, E. H., Caplan, P. J., Deal, B. E. and Razouk, R. R., J. Appl. Phys., 1981, 52, 879.
26. Lenzlinger, M. and Snow, E. H., J. Appl. Phys., 1969, 40, 278.
27. Wolters, D. R. and van der Schoot, J. J., Philips J. Res., 1985, 40, 164.
28. Dumin, D. J., Maddux, J. R., Scott, R. S. and Subramonian, R., IEEE Trans. El. Dev., 1994, 41, 1570.
29. Holland, S. and Hu, C., J. Electrochem. Soc., 1986, 133, 1705.