Preparation and ferroelectric properties of Bi4Zr 0.5Ti2.5O12 thin films on LaNiO3 bottom electrode by the sol-gel method

Journal of Physics D: Applied Physics

Volumn 39, Issue 23, 2006, Pages 5033-5036

  Guo, Dong Yun ^a   Li, Mei Ya ^a   Pei, Ling ^a   Yu, Ben Fang ^a   Wu, Geng Zhu ^a   Zhao, Xing Zhong ^a   Wang, Yun Bo ^b   Yu, Jun ^b  

^a WUHAN UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; ELECTRODES; FERROELECTRICITY; PERMITTIVITY; SOL-GELS; SYNTHESIS (CHEMICAL);

APPLIED VOLTAGE; INSULATING BEHAVIOR; SOL-GEL METHOD;

THIN FILMS;

EID: 33846887199     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/23/020     Document Type: Article

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