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Journal Wuhan University of Technology, Materials Science Edition
Volumn 20, Issue 4, 2005, Pages 20-21
Effect of annealing on ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by the sol-gel method
Author keywords

Bi3.25La0.75 Ti3O12; Ferroelectric thin film; Leakage current; Sol gel method
Indexed keywords

EID: 30944434031     PISSN: 10002413     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02841273     Document Type: Article
Times cited : (7)
References (9)
  • 1
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  • 3
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    • Electrical properties' maxima in thin films of the lead zirconate-lead titanate solid solution system
    • H D Chen, K R Udayakumar, C J Gaskey, et al. Electrical Properties' Maxima in Thin Films of the Lead Zirconate-lead Titanate Solid Solution System. Appl. Phys. Lett., 1995, 67: 3411-3413
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 3411-3413
    • Chen, H.D.1    Udayakumar, K.R.2    Gaskey, C.J.3
  • 5
    • 0029344336 scopus 로고
    • 9/Pt ferroelectric capacitors with practically no polarization fatigue
    • R Dat, J K Lee, O Auciello, etal. Pulsed Laser Ablation Synthesis and Characterization of Layered Pt/SrBi2Ti2 O9/Pt Ferroelectric Capacitors with Practically No Polarization Fatigue. App. Phys .Lett., 1995, 67:572-574
    • (1995) App. Phys .Lett. , vol.67 , pp. 572-574
    • Dat, R.1    Lee, J.K.2    Auciello, O.3
  • 6
    • 0033554712 scopus 로고    scopus 로고
    • Lanthanum-substituted bismuth titanate for use in non-volatile memories
    • B H Park, B S Kang, S B Bu, et al. Lanthanum-substituted Bismuth Titanate for Use in Non-volatile Memories. Nature, 1999, 401:682-684
    • (1999) Nature , vol.401 , pp. 682-684
    • Park, B.H.1    Kang, B.S.2    Bu, S.B.3
  • 7
    • 0038297518 scopus 로고    scopus 로고
    • 12 Thin films prepared by chemical solution deposition
    • H I Kim, Y S Song, J Sok, et al. Effect of La Doping on Structural and Electrical Properties of Ferroelectric Bi4-x, Lax, Ti3 O12 Thin Films Prepared by Chemical Solution Deposition. Thin Solid Films, 2003, 429:114-118
    • (2003) Thin Solid Films , vol.429 , pp. 114-118
    • Kim, H.I.1    Song, Y.S.2    Sok, J.3
  • 8
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    • Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
    • T P Ma, J P Han. Why is Nonvolatile Ferroelectric Memory Field-Effect Transistor Still Elusive? IEEE Electron Device tetters, 2002, 23:386-388
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    • Ma, T.P.1    Han, J.P.2
  • 9
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    • 2 Thin filns derived from a hybrid sol-gel process
    • L B Kong, J Ma.Randomly Oriented Bi4Ti3 O2 Thin Filns Derived from a Hybrid Sol-gel Process. Thin Solid Films, 1998, 379:89-93
    • (1998) Thin Solid Films , vol.379 , pp. 89-93
    • Kong, L.B.1    Ma, J.2

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.