Ferroelectric properties of La and Zr substituted Bi4Ti 3O12 thin films

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3660-3662

  Zhang, S T ^a   Chen, Y F ^a   Wang, J ^a   Cheng, G X ^a   Liu, Z G ^a   Ming, N B ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; COERCIVE FORCE; POLARIZATION; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BISMUTH COMPOUNDS; X RAY DIFFRACTION;

COERCIVE FIELD (EC); FERROELECTRIC FATIGUE; FERROELECTRIC RANDOM ACCESS MEMORY (NVFRAM); REMANENT POLARIZATION (PR);

FERROELECTRIC THIN FILMS;

EID: 2542464093     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1738936     Document Type: Article

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