Characterisation of polycrystalline gallium nitride grown by plasma-assisted evaporation

Current Applied Physics

Volumn 4, Issue 2-4, 2004, Pages 225-228

  Christie, V A ^a   Liem, S I ^a   Reeves, R J ^a   Kennedy, V J ^b   Markwitz, A ^b   Durbin, S M ^a  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

Author keywords

Gallium nitride (GaN); Molecular beamaxy; Polycrystalline thin film

Indexed keywords

EID: 1542401173     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2003.11.015     Document Type: Article

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