X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1797-1799

  Park, Minseo ^a   Maria, J P ^a   Cuomo, J J ^a   Chang, Y C ^a   Muth, J F ^a   Kolbas, R M ^a   Nemanich, R J ^b   Carlson, E ^c   Bumgarner, J ^c  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SINGLE CRYSTALS; FREE CARRIER CONCENTRATION; GAN FILM; HIGH-CRYSTALLINE QUALITY; MAGNETRON SPUTTER EPITAXY; PHONON LIFETIMES; POLARIZED RAMAN SPECTRA; RAMAN ANALYSIS; THERMALLY STABLE; X RAY ROCKING CURVE;

CARRIER CONCENTRATION; EPITAXIAL GROWTH; MAGNETRONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SAPPHIRE; SINGLE CRYSTALS; THICK FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 79956002698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506781     Document Type: Article

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