Electrical properties study of double porous silicon layers: Conduction mechanisms

Materials Science and Engineering: B

Volumn 137, Issue 1-3, 2007, Pages 263-267

  Jemai, R ^a   Alaya, A ^a   Meskini, O ^b   Nouiri, M ^a   Mghaieth, R ^b   Khirouni, K ^a   Alaya, S ^a  

^a UNIVERSITY OF GABES   (Tunisia)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Admittance spectroscopy; Hopping; Porous silicon; Schottky barrier; Transport mechanism

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HETEROJUNCTIONS; POROSITY; SPECTROSCOPIC ANALYSIS; TRANSPORT PROPERTIES;

BAND DIAGRAMS; HOPPING CONDUCTION; TUNNELING CURRENT;

POROUS SILICON;

EID: 33846839103     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.12.003     Document Type: Article

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