Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them

Semiconductors

Volumn 33, Issue 3, 1999, Pages 339-342

  Slobodchikov, S V ^a   Goryachev, D N ^a   Salikhov, Kh M ^a   Sreseli, O M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033092767     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187893     Document Type: Article

References (9)

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