Formation and characterization of room temperature ferromagnetic As-doped p-type (Zn0.93Mn0.07)O layer

Materials Science and Engineering: B

Volumn 137, Issue 1-3, 2007, Pages 40-44

  Lee, Sejoon ^a   Lee, Seung Woong ^a   Shon, Yoon ^a   Kim, Deuk Young ^a  

^a Dongguk University   (South Korea)

Author keywords

As doped ZnMnO; Diluted magnetic semiconductor; Hole mediated ferromagnetism

Indexed keywords

ANNEALING; ARSENIC; DOPING (ADDITIVES); ION IMPLANTATION; IONIC CONDUCTION; MAGNETIC DOMAINS; MORPHOLOGY; THERMAL EFFECTS;

DILUTED MAGNETIC SEMICONDUCTOR; HOLE-MEDIATED FERROMAGNETISM; POSITIVE CHARGE POLARITY;

FERROMAGNETIC MATERIALS;

EID: 33846808947     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.10.007     Document Type: Article

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