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Journal of Crystal Growth

Volumn 286, Issue 2, 2006, Pages 223-227

Effects of oxygen partial pressure during sputtering growth on physical properties of Zn0.93Mn0.07O thin films

(6) Lee, Sejoon a Lee, Hye Sung a Hwang, Sun Jae a Shon, Yoon a Kim, Deuk Young a Kim, E K b

a Dongguk University (South Korea)

b Hanyang University (South Korea)

Author keywords

A3. Sputtering; B1. ZnMnO; B2. Diluted Magnetic Semiconductor

Indexed keywords

CONCENTRATION (PROCESS); FERROMAGNETISM; FILM GROWTH; MAGNETRON SPUTTERING; MIXTURES; PARTIAL PRESSURE; PHOTOLUMINESCENCE; PHYSICAL PROPERTIES; ZINC OXIDE;

AMBIENT GAS MIXTURES; DILUTED MAGNETIC SEMICONDUCTOR; ELECTRON CONCENTRATION; ZNMNO;

THIN FILMS;

EID: 29344435993 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.012 Document Type: Article

Times cited : (23)

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