A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer

Microelectronics Reliability

Volumn 47, Issue 2-3, 2007, Pages 391-394

  Zou, X ^a   Xu, J P ^a   Li, C X ^b   Lai, P T ^b   Chen, W B ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; MATHEMATICAL MODELS; POISSON EQUATION; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

BAND OFFSET; BARRIER LOWERING; PMOSFET; SIMULATED RESULTS;

MOSFET DEVICES;

EID: 33846621101     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.05.019     Document Type: Article

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