Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling

Solid-State Electronics

Volumn 46, Issue 1, 2002, Pages 39-44

  Li, P W ^a   Liao, W M ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

MOSFETs; Short channel effect; SiGe

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC FIELDS; GATES (TRANSISTOR); HOLE MOBILITY; SEMICONDUCTOR QUANTUM WELLS;

DEPLETION CHARGES;

MOSFET DEVICES;

EID: 0036132437     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00277-5     Document Type: Article

References (9)

1. High-mobility modulation-doped graded SiGe-channel p-MOSFETs
2. SiGe pMOSFETs with gate oxide fabricated by microwave electron cyclotron resonance plasma
3. y substrate
4. x alloys
5. Enhancement of PMOS device performance with poly-SiGe gate
6. A study of deep-submicron MOSFET scaling based on experiment and simulation
7. SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs