Characterization and modelling of power RF LDMOS transistor including self-heating effects

Proceedings of the International Conference on Microelectronics, ICM

Volumn , Issue , 2004, Pages 262-265

  Belaid M A ^a   Maanane, H ^a   Mourgues, K ^a   Masmoudi, M ^a   Ketata, K ^a   Marcon, J ^a  

^a UNIVERSITÉ DE ROUEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; HEAT SINKS; MATHEMATICAL MODELS; MOS DEVICES; THERMAL EFFECTS; TRANSCONDUCTANCE; VOLTAGE CONTROL;

CHANNEL CURRENT MODELS; ELECTRON CONCENTRATION; HEAT FLOW; THERMAL NETWORKS;

TRANSISTORS;

EID: 21644438550     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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8. M.N. Sabry, W. Fikry, Kh. Abdel Salam, M. M. Awad and A. E. Nasser, " A lumped transient thermal model for self-heating in MOSFETs", Microelectronics Journal, 32 (2001) 847-853, 2001.
9. W. Burger and P. Gola, Motorola Slide Presentation for RF power, ESNDF 2002.