RF power silicon-on-glass VDMOSFETs

IEEE Electron Device Letters

Volumn 25, Issue 6, 2004, Pages 424-426

  Nenadović, Nebojša ^a   Cuoco, Vittorio ^a   Theeuwen, Steven J C H ^b   Schellevis, Hugo ^a   Spierings, Geert ^b   Griffo, Antonio ^a   Pelk, Marco ^a   Nanver, Lis K ^a   Jos, Rik F F ^b   Slotboom, Jan W ^a,c  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Self heating; Silicon RF power MOSFETs; Silicon on glass (SOG); Substrate transfer; Vertical double diffused MOSFETs (VDMOSFET)

Indexed keywords

ELECTRIC BREAKDOWN; GATES (TRANSISTOR); GLASS; HEAT SINKS; HOT CARRIERS; POWER AMPLIFIERS; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; THERMODYNAMIC STABILITY;

SILICON ON GLASS TECHNOLOGY; SUBSTRATE TRANSFER;

MOSFET DEVICES;

EID: 2942752392     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.829025     Document Type: Letter

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