Growth of Fe on Ge(1 1 1) at room temperature studied by X-ray photoelectron diffraction

Surface Science

Volumn 601, Issue 3, 2007, Pages 638-648

  Chu, W G ^a,b,c   Tsuruta, A ^b   Owari, M ^c,d   Nihei, Y ^b  

^a NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Fe Ge(1 1 1) ultrathin films; Intermixing interface; Stacking fault; X ray photoelectron diffraction; X ray photoelectron spectroscopy

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; FILM GROWTH; GERMANIUM; IRON; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; STACKING FAULTS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERMIXING INTERFACES; OVERLAYER THICKNESSES; X-RAY PHOTOELECTRON DIFFRACTION;

THIN FILMS;

EID: 33846550207     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.10.031     Document Type: Article

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