Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1586-1591

  Tari, S ^a   Sporken, R ^a,b   Aoki, T ^c   Smith, David J ^c   Metlushko, V ^d   AbuEl Rub, K ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b UNIVERSITY OF NAMUR   (Belgium)

^c ARIZONA STATE UNIVERSITY   (United States)

^d University of Illinois at Chicago   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; FILM GROWTH; INTERFACES (MATERIALS); IRON; MAGNETIC PROPERTIES; MAGNETIZATION; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

FOURFOLD SYMMETRY; INTERFACE STRUCTURE; X RAY PHOTOEMISSION SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0035982593     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1491992     Document Type: Conference Paper

References (11)