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Volumn 281-282, Issue 1-2, 1996, Pages 46-51
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Crystalline quality of α-Fe films on Si (111) and Ge (111) substrates grown by direct ion beam deposition
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Author keywords
Epitaxy; Germanium; Iron; Silicon
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Indexed keywords
CRYSTAL LATTICES;
CRYSTALLINE MATERIALS;
DEPOSITION;
EPITAXIAL GROWTH;
INTERFACES (MATERIALS);
ION BEAMS;
IRON;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
CRYSTALLINE QUALITY;
ION BEAM DEPOSITION;
ION ENERGY;
IRON FILM;
LATTICE IMAGES;
FILM GROWTH;
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EID: 13544268000
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/0040-6090(96)08572-0 Document Type: Article |
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Times cited : (6)
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References (10)
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