Towards a model for the formation of positive Si + ions

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 90-93

  Janssens, T ^a   Huyghebaert, C ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Energy dependence; Ionisation probability; Surface oxidation

Indexed keywords

ION BOMBARDMENT; IONIZATION; OXIDATION; OXYGEN; POSITIVE IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SURFACE STRUCTURE;

SURFACE OXIDATION;

SILICON;

EID: 0037438238     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00705-5     Document Type: Conference Paper

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