Quantitative measurement of O/Si ratios in oxygen-sputtered silicon using 18 O implant standards

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 729-733

  Sobers Jr , Richard C ^a   Franzreb, Klaus ^a   Williams, Peter ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Minor isotope standard; Oxidation of silicon; Surface oxygen; Useful ion yield

Indexed keywords

ION BEAMS; ISOTOPES; OXIDATION; POSITIVE IONS; SPUTTERING; STANDARDS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILE; ION YIELD; OXYGEN ENHANCEMENT; SURFACE SENSITIVITY;

SILICON;

EID: 2942592235     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.033     Document Type: Conference Paper

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