Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Khan, Aaliya Rehman ^a   Stangl, J ^a   Bauer, G ^a   Buca, D ^b   Hollander B ^b   Trinkaus, H ^b   Mantl, S ^b   Loo, R ^c   Caymax, M ^c  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL STRUCTURE; ELECTRON MOBILITY; LATTICE CONSTANTS; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION;

ANISOTROPIC STRAIN; IN-PLANE DIRECTIONS; STRIPE-PATTERNED;

STRAIN RELAXATION;

EID: 33846464728     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S50     Document Type: Article

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