SJ and TJ gaas concentrator solar cells on SI virtual wafers

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 850-853

  Gabetta, G ^a   Flores, C ^a   Campesato, R ^a   Casale, C ^a   Timo G ^a   Smekens, G ^b   Vanbegin, J ^b   Von Kanel, H ^c,d   Isella, G ^c,d  

^a CESI   (Italy)

^b ENE   (Belgium)

^c Epispeed   (Switzerland)

^d POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COSTS; DEPOSITION; GERMANIUM; MICROELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SOLAR CONCENTRATORS; SPACE APPLICATIONS;

CONCENTRATOR SYSTEMS; TERRESTRIAL APPLICATIONS; TRIPLE JUNCTION;

SILICON SOLAR CELLS;

EID: 27944484962     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. J.A. Carlin et al., "High efficiency GaAs on Si solar cells with high Voc using graded GeSi buffers", Twenty Eight IEEE PVSC, 2000, pp. 1006-1011.
2. T.Ogawa et al, "Phosphine added hydrogen plasma passivation of GaAs solar cell on Si substrate", Twenty Eight IEEE PVSC, 2000, pp. 1308-1311.
3. D. M. Wilt et al, "LEO testing of GaAs on Si solar cells aboard MISES5", Nineteen European Photovoltaic Solar Energy Conference, 2004, pp. 3602-3605.
4. 0.4 MODFET, etc." Electronic Letters 39, 2003, pp. 149-151.
5. H. von Kanel et Al., "Very high hole mobilities in modulation doped Ge quantum wells grown by low-energy plasma enhanced chemical vapour deposition", Appl. Phys. Lett. 80, 2002, pp 2922-2924.
6. Y. Chiqrui et. Al., "Room temperature laser operation in strained InGaAs/GaAs QW structures monolithically grown by MOCVD on LEPECVD Ge/Si virtual substrates", Electronics Letters 39, 2003, pp 1658-1660.
7. rd World Conference on Photovoltaic Energy Conversion, 2003, CD Proceeding, session 3P-B5.