SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 475-480

AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE

(6) Auvray, L a Dumont, H a Dazord, J a Monteil, Y a Bouix, J a Bru Chevalier, C b

a UNIVERSITÉ CLAUDE BERNARD LYON 1 (France)

b INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DIFFUSION IN SOLIDS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDES; NUCLEATION; SEMICONDUCTING FILMS;

GALLIUM ARSENIC NITRIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034505627 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00747-8 Document Type: Article

Times cited : (13)

References (14)

1
- 0030385606
- Kao Y.C., Broekaert T.P.E., Liu H.Y., Tang S., Ho I.H., Stringfellow G.B. Mater. Res. Soc. Symp. Proc. 423:1996;335.
- (1996) Mater. Res. Soc. Symp. Proc. , vol.423 , pp. 335
- Kao, Y.C.¹ Broekaert, T.P.E.² Liu, H.Y.³ Tang, S.⁴ Ho, I.H.⁵ Stringfellow, G.B.⁶

2
- 0001375334
- Bi W.G., Tu C.W. Appl. Phys. Lett. 70:1997;1608.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1608
- Bi, W.G.¹ Tu, C.W.²

3
- 0032633502
- Moto A., Tanaka S., Ikoma N., Tanabe T., Takagishi S., Takahashi M., Katsuyama T. Jpn. J. Appl. Phys. 38:1999;1015.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 1015
- Moto, A.¹ Tanaka, S.² Ikoma, N.³ Tanabe, T.⁴ Takagishi, S.⁵ Takahashi, M.⁶ Katsuyama, T.⁷

4
- 0032022187
- Rao E.V.K., Ougazzaden A., Le Bellego Y., Juhel M. Appl. Phys. Lett. 72:1998;1409.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1409
- Rao, E.V.K.¹ Ougazzaden, A.² Le Bellego, Y.³ Juhel, M.⁴

5
- 0032091586
- Uesugi K., Suemune I. J. Crystal Growth. 189/190:1998;490.
- (1998) J. Crystal Growth , vol.189-190 , pp. 490
- Uesugi, K.¹ Suemune, I.²

6
- 0032632371
- Ougazzaden A., Rao E., Sermage B., Leprince L., Gauneau M. Jpn. J. Appl. Phys. 38:1999;1019.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 1019
- Ougazzaden, A.¹ Rao, E.² Sermage, B.³ Leprince, L.⁴ Gauneau, M.⁵

7
- 36449009202
- Shinohara M., Inoue N. Appl. Phys. Lett. 66:1995;1936.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1936
- Shinohara, M.¹ Inoue, N.²

8
- 0028259949
- Ishizaki J., Goto S., Kishida M., Fukui T., Hasegawa H. Jpn. J. Appl. Phys. 33:1994;721.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 721
- Ishizaki, J.¹ Goto, S.² Kishida, M.³ Fukui, T.⁴ Hasegawa, H.⁵

9
- 0031275901
- Li J., Kuech T.F. J. Crystal Growth. 181:1997;171.
- (1997) J. Crystal Growth , vol.181 , pp. 171
- Li, J.¹ Kuech, T.F.²

10
- 0001121365
- Bales G.S., Zangwill A. Phys. Rev. B. 41:1990;5500.
- (1990) Phys. Rev. B , vol.41 , pp. 5500
- Bales, G.S.¹ Zangwill, A.²

11
- 0342831426
- Prague
- L. Auvray, H. Dumont, J. Dazord, Y. Monteil, J. Bouix, C. Bru-Chevalier, L. Grenouillet, G. Guillot, Proceedings of EW-MOVPE VIII, Prague, 1999, p. 429.
- (1999) Proceedings of EW-MOVPE , vol.8 , pp. 429
- Auvray, L.¹ Dumont, H.² Dazord, J.³ Monteil, Y.⁴ Bouix, J.⁵ Bru-Chevalier, C.⁶ Grenouillet, L.⁷ Guillot, G.⁸

12
- 0034140413
- Kitatani T., Nakahara K., Kondow M., Uomi K., Tanaka T. J. Crystal Growth. 209:2000;345.
- (2000) J. Crystal Growth , vol.209 , pp. 345
- Kitatani, T.¹ Nakahara, K.² Kondow, M.³ Uomi, K.⁴ Tanaka, T.⁵

13
- 0032615293
- Xin H.P., Kavanagh K.L., Zhu Z.Q., Tu C.W. Appl. Phys. Lett. 74:1999;2337.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2337
- Xin, H.P.¹ Kavanagh, K.L.² Zhu, Z.Q.³ Tu, C.W.⁴

14
- 0032621590
- Buyanova I.A., Chen W.M., Pozina G., Bergman J.P., Monemar B., Xin H.P., Tu C.W. Appl. Phys. Lett. 75:1999;501.
- (1999) Appl. Phys. Lett. , vol.75 , pp. 501
- Buyanova, I.A.¹ Chen, W.M.² Pozina, G.³ Bergman, J.P.⁴ Monemar, B.⁵ Xin, H.P.⁶ Tu, C.W.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.