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Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 550-553

Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111)

(3) Katona, T M a Speck, J S a Denbaars, S P a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; STRESSES; X RAY DIFFRACTION ANALYSIS;

CANTILEVER EPITAXY; MESA;

GALLIUM NITRIDE;

EID: 0036960016 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200212)194:2<550::AID-PSSA550>3.0.CO;2-R Document Type: Article

Times cited : (13)

References (7)

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