Comparative study of Mn and Fe incorporation into GaN by metalorganic chemical vapor deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 61-71

  Kane, M H ^a,b   Gupta, S ^a   Fenwick, W E ^a   Li, N ^a   Park, E H ^a   Strassburg, M ^a   Ferguson, I T ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISORDER INDUCED MODES; FORMATION ENERGY; SELF COMPENSATION; VIBRATIONAL MODES;

EPITAXIAL GROWTH; FERROMAGNETISM; GALLIUM NITRIDE; IRON; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; X RAY DIFFRACTION;

MAGNETIC SEMICONDUCTORS;

EID: 33846452139     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673006     Document Type: Conference Paper

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