X-band GaN power HEMTs with power density of 2.23 W/mm grown on sapphire by MOCVD

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 10, 2005, Pages 1865-1870

  Wang, Xiaoliang ^a   Liu, Xinyu ^b   Hu, Guoxin ^a   Wang, Junxi ^a   Ma, Zhiyong ^a   Wang, Cuimei ^a   Li, Jianping ^a   Ran, Junxue ^a   Zheng, Yingkui ^b   Qian, He ^b   Zeng, Yiping ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

AlGaN GaN; HEMT; MOCVD; Power device

Indexed keywords

ALUMINUM COMPOUNDS; CHARACTERIZATION; CONCENTRATION (PROCESS); CURRENT DENSITY; EPITAXIAL GROWTH; FABRICATION; GALLIUM NITRIDE; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SUBSTRATES; TEMPERATURE; TRANSCONDUCTANCE;

BUFFER LAYER; POWER DEVICE; SHEET RESISTANCE; THIN LAYER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 29144441295     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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