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Volumn 29, Issue 1-2, 1998, Pages 21-30

Correcting separation errors related to contact resistance measurement

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY ELEMENT METHOD; COMPUTER SIMULATION; ELECTRIC RESISTANCE; ERROR CORRECTION; MATHEMATICAL MODELS; OHMIC CONTACTS; SEMICONDUCTOR DEVICES; TRANSMISSION LINE THEORY;

EID: 0031632644     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(97)00028-1     Document Type: Article
Times cited : (2)

References (8)
  • 1
    • 0013011909 scopus 로고
    • Research and investigation of inverse epitaxial UHF power transistors
    • Air Force Atomic Laboratory, Wright-Paterson Air Force Base, Ohio
    • Shockley, W. Research and investigation of inverse epitaxial UHF power transistors, Report No. Al-TOR-64-207, Air Force Atomic Laboratory, Wright-Paterson Air Force Base, Ohio, 1964.
    • (1964) Report No. Al-TOR-64-207
    • Shockley, W.1
  • 2
    • 0001672081 scopus 로고
    • Models for contacts to planar devices
    • Berger, H. Models for contacts to planar devices, Solid-State Electron., 15 (1972) 145
    • (1972) Solid-State Electron. , vol.15 , pp. 145
    • Berger, H.1
  • 4
    • 0029359212 scopus 로고
    • An analytical model for alloyed ohmic contacts using a trilayer transmission line model
    • Reeves, G.K. and Harrison, H.B. An analytical model for alloyed ohmic contacts using a trilayer transmission line model, IEEE Trans. Electron Devices, 42 (1995) 1536.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1536
    • Reeves, G.K.1    Harrison, H.B.2
  • 5
    • 0020129227 scopus 로고
    • Obtaining the specific contact resistance from transmission line model measurements
    • Reeves, G.K. and Harrison, H.B. Obtaining the specific contact resistance from transmission line model measurements, IEEE Electron Device Lett., EDL-3 (1982) 111.
    • (1982) IEEE Electron Device Lett. , vol.EDL-3 , pp. 111
    • Reeves, G.K.1    Harrison, H.B.2
  • 6
    • 0022691158 scopus 로고
    • Determination of contact parameters of interconnecting layers in VLSI circuits
    • Reeves, G.K. and Harrison, H.B. Determination of contact parameters of interconnecting layers in VLSI circuits, IEEE Electron Devices, 3 (1986) 328.
    • (1986) IEEE Electron Devices , vol.3 , pp. 328
    • Reeves, G.K.1    Harrison, H.B.2
  • 7
    • 0024702897 scopus 로고
    • Characterization of alloyed AuGe/Ni/ Au ohmic contacts to n-doped gaas by measurement of transfer length and under the contact sheet resistance
    • Henry, H.G. Characterization of alloyed AuGe/Ni/ Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistance, IEEE Trans. Electron Devices, 36 (1989) 1390.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1390
    • Henry, H.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.