Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 32-36

  Song, Haizheng ^a,d   Im, Ik Tae ^b   Sugiyama, Masakazu ^a,d   Nakano, Yoshiaki ^c,d   Shimogaki, Yukihiro ^a,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b Iksan National College   (South Korea)

^c UNIVERSITY OF TOKYO   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Surface reaction kinetics; A3. Metal organic vapor phase epitaxy; A3. Selective area growth; B1. GaAs

Indexed keywords

ADSORPTION; COMPUTATIONAL FLUID DYNAMICS; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SURFACE REACTIONS; THIN FILMS;

FILM PRECURSORS; MASS TRANSPORT RATE; SELECTIVE AREA GROWTH; SURFACE REACTION KINETICS;

GALLIUM COMPOUNDS;

EID: 33846416937     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.230     Document Type: Article

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