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Journal of Crystal Growth

Volumn 276, Issue 3-4, 2005, Pages 431-438

A numerical study on heat transfer and film growth rate of InP and GaAs MOCVD process

(4) Im, Ik Tae a Sugiyama, Masakazu b,d Shimogaki, Yukihiro b,d Nakano, Yoshiyaki c,d

a Iksan National College (South Korea)

b UNIVERSITY OF TOKYO (Japan)

c UNIVERSITY OF TOKYO (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

A3. Metalorganic chemical vapor deposition; Al. Computer simulation; Al. Heat transfer; B2. Semiconducting III V materials

Indexed keywords

BOUNDARY CONDITIONS; CHEMICAL REACTORS; COMPUTATIONAL FLUID DYNAMICS; COMPUTER SIMULATION; FLOW OF FLUIDS; HEAT TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE DISTRIBUTION; THERMAL DIFFUSION;

FILM DEPOSITION; FILM GROWTH RATE; REACTOR WALLS; SEMICONDUCTING III-IV MATERIALS;

FILM GROWTH;

EID: 15344341596 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.082 Document Type: Article

Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.