SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of the Korean Physical Society

Volumn 49, Issue SUPPL. 2, 2006, Pages

Metal precursor effects on deposition and interfacial characteristics of HfO2 dielectrics grown by atomic layer deposition

(4) Park, In Sung a Lee, Taeho a Choi, Duck Kyun a Ahn, Jinho a

a Hanyang University (South Korea)

Author keywords

ALD; Gate dielectric; HfO2; Metal precursor

Indexed keywords

EID: 33846339427 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (11)

References (15)

1
- 33846389380
- International Technology Roadmap for Semiconductors
- International Technology Roadmap for Semiconductors, 2005.
- (2005)

2
- 0035872897
- G. D. Wilk, R. M. Wallace and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
- (2001) J. Appl. Phys , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

3
- 0037298422
- T. Lee, J. Ahn, J. Oh, Y. Kim, Y.-B. Kim, D.-K. Choi and J. Jung, J. Korean Phys. Soc. 42, 272 (2003).
- (2003) J. Korean Phys. Soc , vol.42 , pp. 272
- Lee, T.¹ Ahn, J.² Oh, J.³ Kim, Y.⁴ Kim, Y.-B.⁵ Choi, D.-K.⁶ Jung, J.⁷

4
- 29344456791
- S.-W. Jeong, K. S. Kim, M. T. You, Y. Roh, T. Noguchi, J. Jung and J.-Y. Kwon, J. Korean Phys. Soc. 47, 401 (2005).
- (2005) J. Korean Phys. Soc , vol.47 , pp. 401
- Jeong, S.-W.¹ Kim, K.S.² You, M.T.³ Roh, Y.⁴ Noguchi, T.⁵ Jung, J.⁶ Kwon, J.-Y.⁷

5
- 10444273191
- H. Jin, S. W. Lee, H. J. Kang, Y. S. Lee, S. K. Rha, H. S. Lee and K. Y. Lim, J. Korean Phys. Soc. 45, 1292 (2004).
- (2004) J. Korean Phys. Soc , vol.45 , pp. 1292
- Jin, H.¹ Lee, S.W.² Kang, H.J.³ Lee, Y.S.⁴ Rha, S.K.⁵ Lee, H.S.⁶ Lim, K.Y.⁷

6
- 0347204103
- T. Suntola, Mater. Sci. Rep. 4, 262 (1989).
- (1989) Mater. Sci. Rep , vol.4 , pp. 262
- Suntola, T.¹

7
- 0035504954
- M. V. Fischetti, D. Neumayer and E. Cartier, J. Appl. Phys. 90, 4587 (2001).
- (2001) J. Appl. Phys , vol.90 , pp. 4587
- Fischetti, M.V.¹ Neumayer, D.² Cartier, E.³

8
- 24344433107
- S. Kamiyama, T. Miura, Y. Nara and T. Arikado, Electrochem. Solid-State Lett. 8, G215 (2005).
- (2005) Electrochem. Solid-State Lett , vol.8
- Kamiyama, S.¹ Miura, T.² Nara, Y.³ Arikado, T.⁴

9
- 21644476336
- D. H. Triyoso, R. I. Hegde, B. E. White, Jr. and P. J. Tobin, J. Appl. Phys. 97, 124107 (2005).
- (2005) J. Appl. Phys , vol.97 , pp. 124107
- Triyoso, D.H.¹ Hegde, R.I.² White Jr., B.E.³ Tobin, P.J.⁴

10
- 10444253892
- T. Lee, H.-K. Ko, Y. Kim, J. Ahn, Y.-B. Kim, K. S. Kim and D.-K. Choi, J. Korean Phys. Soc. 45, 1308 (2004).
- (2004) J. Korean Phys. Soc , vol.45 , pp. 1308
- Lee, T.¹ Ko, H.-K.² Kim, Y.³ Ahn, J.⁴ Kim, Y.-B.⁵ Kim, K.S.⁶ Choi, D.-K.⁷

11
- 0032653080
- J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare and V. Sammelselg, Thin Solid Films 340, 110 (1999).
- (1999) Thin Solid Films , vol.340 , pp. 110
- Aarik, J.¹ Aidla, A.² Kiisler, A.-A.³ Uustare, T.⁴ Sammelselg, V.⁵

12
- 0000364381
- S. J. Yun, K.-H. Lee, J. Skarp, H.-R. Kim and K.-S. Nam, J. Vac. Sci. Technol. A 15, 2993 (1997).
- (1997) J. Vac. Sci. Technol. A , vol.15 , pp. 2993
- Yun, S.J.¹ Lee, K.-H.² Skarp, J.³ Kim, H.-R.⁴ Nam, K.-S.⁵

13
- 15744384552
- X. Liu, S. Ramanathan, A. Longdergan, A. Srivastava, E. Lee, T. E. Seidel, J. T. Barton, D. Pang and R. G. Gordon, J. Electrochem. Soc. 152, G213 (2005).
- (2005) J. Electrochem. Soc , vol.152
- Liu, X.¹ Ramanathan, S.² Longdergan, A.³ Srivastava, A.⁴ Lee, E.⁵ Seidel, T.E.⁶ Barton, J.T.⁷ Pang, D.⁸ Gordon, R.G.⁹

14
- 79956056584
- M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002).
- (2002) Appl. Phys. Lett , vol.80 , pp. 3183
- Visokay, M.R.¹ Chambers, J.J.² Rotondaro, A.L.P.³ Shanware, A.⁴ Colombo, L.⁵

15
- 0003610719
- John Wiley & Sons, New York
- E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (John Wiley & Sons, New York, 1982).
- (1982) MOS (Metal Oxide Semiconductor) Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.