Stability of 3C-SiC surfaces under diamond growth conditions

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Arnault, J C ^a,c   Delclos, S ^b   Saada, S ^b   Tranchant, N ^b   Bergonzo, Ph ^b  

^a CEA SACLAY   (France)

^b CEA LIST   (France)

^c UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIAMONDS; LOW ENERGY ELECTRON DIFFRACTION; STOICHIOMETRY; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC ORDERING; DIAMOND GROWTH; OXYGEN CONTAMINATION;

SILICON CARBIDE;

EID: 33846277609     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2404786     Document Type: Article

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