Behaviour of the 3C-SiC(100) c(2 × 2) (C-terminated) and 3 × 2 (Si-rich) surface reconstructions upon initial H 2/CH 4 microwave plasma exposures

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 11, 2005, Pages 2234-2239

  Portail, M ^a   Saada, S ^a,d   Delclos, S ^a   Arnault, J C ^a,e   Soukiassian, P ^a   Bergonzo, Ph ^b   Chassagne, Th ^c,d   Leycuras, A ^c  

^a DIF   (France)

^b CEA LIST   (France)

^c CNRS   (France)

^d SAVOIE TECHNOLAC   (France)

^e INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ARRANGEMENTS; MICROWAVE PLASMAS; OXYGEN CONTAMINATION; SURFACE RECONSTRUCTION;

ANNEALING; CRYSTAL GROWTH; OXYGEN; PLASMA THEORY; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON CARBIDE;

EID: 33746463614     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200561921     Document Type: Conference Paper

References (7)

1. V. M. Bermudez, phys. stat. sol. (b) 202, 447 (1997).
2. P. Soukiassian and H. Enriquez, J. Phys.: Condens. Matter 16, 1611 (2004).
3. S. Saada, S. Barrat, and E. Bauer-Grosse, Diam. Relat. Mater. 10, 300 (2001).
4. V. Derycke, P. Fonteneau, N. P. Pham, and P. Soukiassian, Phys. Rev. B 63, R201305 (2001).
5. M. G. Silly, J. Roy, H. Enriquez, P. Soukiassian, C. Crotti, S. Fontana, and P. Perfetti, J. Vac. Sci. Technol. B 22, 2226 (2004).
6. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 11, 577 (1988).
7. V. Derycke, P. Soukiassian, A. Mayne, and G. Dujardin, Surf. Sci. Lett. 446, L101 (2000).