Operation and properties of ambipolar organic heterostructure field-effect transistors

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Lindner, Th ^a   Paasch, G ^a   Scheinert, S ^b  

^a IFW DRESDEN   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONTACTS; ELECTRON MOBILITY; GOLD; HOLE MOBILITY; INTERFACES (MATERIALS); PHYSICAL PROPERTIES; THRESHOLD VOLTAGE;

AMBIPOLAR EFFECTS; CONTACT PROPERTIES; CURRENT-VOLTAGE CHARACTERISTICS; ELECTRON CHANNELS;

FIELD EFFECT TRANSISTORS;

EID: 33846265864     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402353     Document Type: Article

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